| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AOTF12N65 | ALPHA & OMEGA SEMICONDUCTOR LTD | MOSFET N-Channel, Metal Oxide | 650V | 12A (Tc) | 720 mOhm @ 6A, 10V | 4.5V @ 250µA | 48nC @ 10V | 2150pF @ 25V | 50W | Through Hole | TO-220-3 Full Pack | |
| AOT12N65 | ALPHA & OMEGA SEMICONDUCTOR LTD | MOSFET N-Channel, Metal Oxide | 650V | 12A (Tc) | 720 mOhm @ 6A, 10V | 4.5V @ 250µA | 48nC @ 10V | 2150pF @ 25V | 278W | Through Hole | TO-220-3 | |
| AOWF12N65 | ALPHA & OMEGA SEMICONDUCTOR LTD | MOSFET N-Channel, Metal Oxide | 650V | 12A (Tc) | 720 mOhm @ 6A, 10V | 4.5V @ 250µA | 48nC @ 10V | 2150pF @ 25V | 28W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| AOW12N65 | ALPHA & OMEGA SEMICONDUCTOR LTD | MOSFET N-Channel, Metal Oxide | 650V | 12A (Tc) | 720 mOhm @ 6A, 10V | 4.5V @ 250µA | 48nC @ 10V | 2150pF @ 25V | 278W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| IRFB9N65APBF | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 650V | 8.5A (Tc) | 930 mOhm @ 5.1A, 10V | 4V @ 250µA | 48nC @ 10V | 1417pF @ 25V | 167W | Through Hole | TO-220-3 | |
| IRFIB5N65APBF | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 650V | 5.1A (Tc) | 930 mOhm @ 3.1A, 10V | 4V @ 250µA | 48nC @ 10V | 1417pF @ 25V | 60W | Through Hole | TO-220-3 Full Pack, Isolated Tab | |
| SIHD6N65E-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 650V | 7A (Tc) | 600 mOhm @ 3A, 10V | 4V @ 250µA | 48nC @ 10V | 820pF @ 100V | 78W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| SIHB6N65E-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 650V | 7A (Tc) | 600 mOhm @ 3A, 10V | 4V @ 250µA | 48nC @ 10V | 820pF @ 100V | 78W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IRFB9N65A | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 650V | 8.5A (Tc) | 930 mOhm @ 5.1A, 10V | 4V @ 250µA | 48nC @ 10V | 1417pF @ 25V | 167W | Through Hole | TO-220-3 | |
| IRFIB5N65A | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 650V | 5.1A (Tc) | 930 mOhm @ 3.1A, 10V | 4V @ 250µA | 48nC @ 10V | 1417pF @ 25V | 60W | Through Hole | TO-220-3 Full Pack, Isolated Tab |
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