Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Rds On (Max) @ Id, Vgs 720 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) @ Vgs 48nC @ 10V
Input Capacitance (Ciss) @ Vds 2150pF @ 25V
Power - Max 278W
Mounting Type Through Hole
Package / Case TO-220-3