620V,Drain to Source Voltage (Vdss)
34nC @ 10V,Gate Charge (Qg) @ Vgs
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
STF6N62K3 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 620V 5.5A (Tc) 1.28 Ohm @ 2.8A, 10V 4.5V @ 50µA 34nC @ 10V 875pF @ 50V 30W Through Hole TO-220-3 Full Pack
STFI6N62K3 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 620V 5.5A (Tc) 1.2 Ohm @ 2.8A, 10V 4.5V @ 50µA 34nC @ 10V 875pF @ 50V 30W Through Hole TO-262-3 Full Pack, I²Pak
STP6N62K3 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 620V 5.5A (Tc) 1.2 Ohm @ 2.8A, 10V 4.5V @ 50µA 34nC @ 10V 875pF @ 50V 90W Through Hole TO-220-3
STI6N62K3 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 620V 5.5A (Tc) 1.2 Ohm @ 2.8A, 10V 4.5V @ 50µA 34nC @ 10V 875pF @ 50V 90W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
STB6N62K3 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 620V 5.5A (Tc) 1.2 Ohm @ 2.8A, 10V 4.5V @ 50µA 34nC @ 10V 875pF @ 50V 90W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIHD6N62E-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 620V 6A (Tc) 900 mOhm @ 3A, 10V 4V @ 250µA 34nC @ 10V 578pF @ 100V 78W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SIHU6N62E-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 620V 6A (Tc) 900 mOhm @ 3A, 10V 4V @ 250µA 34nC @ 10V 578pF @ 100V 78W Through Hole TO-251-3 Long Leads, IPak, TO-251AB