Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 620V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
Rds On (Max) @ Id, Vgs 1.2 Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) @ Vgs 34nC @ 10V
Input Capacitance (Ciss) @ Vds 875pF @ 50V
Power - Max 30W
Mounting Type Through Hole
Package / Case TO-262-3 Full Pack, I²Pak
Buying Option 1
1
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INR 1226.1
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 1226.1