| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDC5614P | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 60V | 3A (Ta) | 105 mOhm @ 3A, 10V | 3V @ 250µA | 24nC @ 10V | 759pF @ 30V | 800mW | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | |
| FDC5612 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 60V | 4.3A (Ta) | 55 mOhm @ 4.3A, 10V | 4V @ 250µA | 18nC @ 10V | 650pF @ 25V | 800mW | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | |
| FDMC89521L | FAIRCHILD SEMICONDUCTOR CORP | 2 N-Channel (Asymmetrical Bridge) | 60V | 8.2A | 17 mOhm @ 8.2A, 10V | 3V @ 250µA | 24nC @ 10V | 1635pF @ 30V | 800mW | Surface Mount | 8-PowerWDFN | |
| FDC5612_F095 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 60V | 4.3A (Ta) | 55 mOhm @ 4.3A, 10V | 4V @ 250µA | 18nC @ 10V | 650pF @ 25V | 800mW | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | |
| FDC5614P_D87Z | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 60V | 3A (Ta) | 105 mOhm @ 3A, 10V | 3V @ 250µA | 24nC @ 10V | 759pF @ 30V | 800mW | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | |
| MMFT960T1G | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 60V | 300mA (Tc) | 1.7 Ohm @ 1A, 10V | 3.5V @ 1mA | 3.2nC @ 10V | 65pF @ 25V | 800mW | Surface Mount | TO-261-4, TO-261AA | |
| MMFT960T1 | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 60V | 300mA (Tc) | 1.7 Ohm @ 1A, 10V | 3.5V @ 1mA | 3.2nC @ 10V | 65pF @ 25V | 800mW | Surface Mount | TO-261-4, TO-261AA | |
| SQ7414EN-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 60V | 5.6A (Tc) | 25 mOhm @ 8.7A, 10V | 2.5V @ 250µA | 25nC @ 10V | - | 800mW | Surface Mount | PowerPAK® 1212-8 | |
| BS250KL-TR1-E3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 60V | 270mA (Ta) | 6 Ohm @ 500mA, 10V | 3V @ 250µA | 3nC @ 15V | - | 800mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| TP0610KL-TR1-E3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 60V | 270mA (Ta) | 6 Ohm @ 500mA, 10V | 3V @ 250µA | 3nC @ 15V | - | 800mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
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