60V,Drain to Source Voltage (Vdss)
43W,Power - Max
10 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRFIZ48VPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 60V 39A (Tc) 12 mOhm @ 43A, 10V 4V @ 250µA 110nC @ 10V 1985pF @ 25V 43W Through Hole TO-220-3 Full Pack
IRLZ14PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 10A (Tc) 200 mOhm @ 6A, 5V 2V @ 250µA 8.4nC @ 5V 400pF @ 25V 43W Through Hole TO-220-3
IRF9Z10PBF VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 6.7A (Tc) 500 mOhm @ 4A, 10V 4V @ 250µA 12nC @ 10V 270pF @ 25V 43W Through Hole TO-220-3
IRFZ14PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 10A (Tc) 200 mOhm @ 6A, 10V 4V @ 250µA 11nC @ 10V 300pF @ 25V 43W Through Hole TO-220-3
IRF9Z14PBF VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 6.7A (Tc) 500 mOhm @ 4A, 10V 4V @ 250µA 12nC @ 10V 270pF @ 25V 43W Through Hole TO-220-3
IRFZ10PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 10A (Tc) 200 mOhm @ 6A, 10V 4V @ 250µA 11nC @ 10V 300pF @ 25V 43W Through Hole TO-220-3
IRFZ14 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 10A (Tc) 200 mOhm @ 6A, 10V 4V @ 250µA 11nC @ 10V 300pF @ 25V 43W Through Hole TO-220-3
IRFZ10 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 10A (Tc) 200 mOhm @ 6A, 10V 4V @ 250µA 11nC @ 10V 300pF @ 25V 43W Through Hole TO-220-3
IRLZ14 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 10A (Tc) 200 mOhm @ 6A, 5V 2V @ 250µA 8.4nC @ 5V 400pF @ 25V 43W Through Hole TO-220-3
IRF9Z14 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 6.7A (Tc) 500 mOhm @ 4A, 10V 4V @ 250µA 12nC @ 10V 270pF @ 25V 43W Through Hole TO-220-3