MOSFET P-Channel, Metal Oxide,FET Type
60V,Drain to Source Voltage (Vdss)
43W,Power - Max
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRF9Z10PBF VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 6.7A (Tc) 500 mOhm @ 4A, 10V 4V @ 250µA 12nC @ 10V 270pF @ 25V 43W Through Hole TO-220-3
IRF9Z14PBF VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 6.7A (Tc) 500 mOhm @ 4A, 10V 4V @ 250µA 12nC @ 10V 270pF @ 25V 43W Through Hole TO-220-3
IRF9Z14 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 6.7A (Tc) 500 mOhm @ 4A, 10V 4V @ 250µA 12nC @ 10V 270pF @ 25V 43W Through Hole TO-220-3