| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FQA47P06 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 60V | 55A (Tc) | 26 mOhm @ 27.5A, 10V | 4V @ 250µA | 110nC @ 10V | 3600pF @ 25V | 214W | Through Hole | TO-3P-3, SC-65-3 | |
| FQA85N06 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 60V | 100A (Tc) | 10 mOhm @ 50A, 10V | 4V @ 250µA | 112nC @ 10V | 4120pF @ 25V | 214W | Through Hole | TO-3P-3, SC-65-3 | |
| IPB080N06N G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 80A (Tc) | 7.7 mOhm @ 80A, 10V | 4V @ 150µA | 93nC @ 10V | 3500pF @ 30V | 214W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IPP070N06L G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 80A (Tc) | 7 mOhm @ 80A, 10V | 2V @ 150µA | 126nC @ 10V | 4300pF @ 30V | 214W | Through Hole | TO-220-3 | |
| IPP080N06N G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 80A (Tc) | 8 mOhm @ 80A, 10V | 4V @ 150µA | 93nC @ 10V | 3500pF @ 30V | 214W | Through Hole | TO-220-3 | |
| IPB070N06L G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 80A (Tc) | 6.7 mOhm @ 80A, 10V | 2V @ 150µA | 126nC @ 10V | 4300pF @ 30V | 214W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IPB023N06N3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 60V | 140A | 2.3 mOhm @ 100A, 10V | 4V @ 141µA | 198nC @ 10V | 16000pF @ 30V | 214W | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | |
| NTP75N06 | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 60V | 75A (Ta) | 9.5 mOhm @ 37.5A, 10V | 4V @ 250µA | 130nC @ 10V | 4510pF @ 25V | 214W | Through Hole | TO-220-3 |
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