Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Rds On (Max) @ Id, Vgs 10 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 112nC @ 10V
Input Capacitance (Ciss) @ Vds 4120pF @ 25V
Power - Max 214W
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3