60V,Drain to Source Voltage (Vdss)
550pF @ 25V,Input Capacitance (Ciss) @ Vds
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FQPF11P06 FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 60V 8.6A 175 mOhm @ 4.3A, 10V 4V @ 250µA 17nC @ 10V 550pF @ 25V 30W Through Hole TO-220-3 Full Pack
FQD11P06TM FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 60V 9.4A 185 mOhm @ 4.7A, 10V 4V @ 250µA 17nC @ 10V 550pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
FQB11P06TM FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 60V 11.4A 175 mOhm @ 5.7A, 10V 4V @ 250µA 17nC @ 10V 550pF @ 25V 3.13W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQU11P06TU FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 60V 9.4A (Tc) 185 mOhm @ 4.7A, 10V 4V @ 250µA 17nC @ 10V 550pF @ 25V 2.5W Through Hole TO-251-3 Short Leads, IPak, TO-251AA
FQP11P06 FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 60V 11.4A (Tc) 175 mOhm @ 5.7A, 10V 4V @ 250µA 17nC @ 10V 550pF @ 25V 53W Through Hole TO-220-3
FQD11P06TF FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 60V 9.4A (Tc) 185 mOhm @ 4.7A, 10V 4V @ 250µA 17nC @ 10V 550pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
FQI11P06TU FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 60V 11.4A (Tc) 175 mOhm @ 5.7A, 10V 4V @ 250µA 17nC @ 10V 550pF @ 25V 3.13W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA