60V,Drain to Source Voltage (Vdss)
56nC @ 10V,Gate Charge (Qg) @ Vgs
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IPB026N06N INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 25A (Ta), 100A (Tc) 2.6 mOhm @ 100A, 10V 2.8V @ 75µA 56nC @ 10V 4100pF @ 30V 3W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPI029N06N INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 24A (Ta), 100A (Tc) 2.9 mOhm @ 100A, 10V 2.8V @ 75µA 56nC @ 10V 4100pF @ 30V 3W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IPP029N06N INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 24A (Ta), 100A (Tc) 2.9 mOhm @ 100A, 10V 2.8V @ 75µA 56nC @ 10V 4100pF @ 30V 3W Through Hole TO-220-3
IPD90N06S4-07 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 90A (Tc) 6.9 mOhm @ 90A, 10V 4V @ 40µA 56nC @ 10V 4500pF @ 25V 79W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IPB80N06S4-07 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 80A (Tc) 7.1 mOhm @ 80A, 10V 4V @ 40µA 56nC @ 10V 4500pF @ 25V 79W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPI80N06S4-07 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 80A (Tc) 7.4 mOhm @ 80A, 10V 4V @ 40µA 56nC @ 10V 4500pF @ 25V 79W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IPP80N06S4-07 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 60V 80A (Tc) 7.4 mOhm @ 80A, 10V 4V @ 40µA 56nC @ 10V 4500pF @ 25V 79W Through Hole TO-220-3
PSMN5R5-60YS,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 100A (Tc) 5.2 mOhm @ 15A, 10V 4V @ 1mA 56nC @ 10V 3501pF @ 30V 130W Surface Mount SC-100, SOT-669, 4-LFPAK