Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs 2.6 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.8V @ 75µA
Gate Charge (Qg) @ Vgs 56nC @ 10V
Input Capacitance (Ciss) @ Vds 4100pF @ 30V
Power - Max 3W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB