| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ZXMN6A09KTC | DIODES INC | MOSFET N-Channel, Metal Oxide | 60V | 7.7A (Ta) | 40 mOhm @ 7.3A, 10V | 3V @ 250µA | 29nC @ 10V | 1426pF @ 30V | 2.15W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| FDB13AN06A0 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 60V | 10.9A (Ta), 62A (Tc) | 13.5 mOhm @ 62A, 10V | 4V @ 250µA | 29nC @ 10V | 1350pF @ 25V | 115W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| FDD13AN06A0_F085 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 60V | 9.9A (Ta), 50A (Tc) | 13.5 mOhm @ 50A, 10V | 4V @ 250µA | 29nC @ 10V | 1350pF @ 25V | 115W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| FDD13AN06A0 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 60V | 9.9A (Ta), 50A (Tc) | 13.5 mOhm @ 50A, 10V | 4V @ 250µA | 29nC @ 10V | 1350pF @ 25V | 115W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| NTD5865NLT4G | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 60V | 46A (Tc) | 16 mOhm @ 20A, 10V | 2V @ 250µA | 29nC @ 10V | 1400pF @ 25V | 52W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| NVD5865NLT4G | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 60V | - | 16 mOhm @ 19A, 10V | 2V @ 250µA | 29nC @ 10V | 1400pF @ 25V | 3.1W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| TK25E06K3,S1X(S | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 60V | 25A | 18 mOhm @ 12.5A, 10V | - | 29nC @ 10V | - | 60W | Through Hole | TO-220-3 | |
| FDP13AN06A0 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 60V | 10.9A (Ta), 62A (Tc) | 13.5 mOhm @ 62A, 10V | 4V @ 250µA | 29nC @ 10V | 1350pF @ 25V | 115W | Through Hole | TO-220-3 | |
| NTD5865NL-1G | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 60V | 46A (Tc) | 16 mOhm @ 20A, 10V | 2V @ 250µA | 29nC @ 10V | 1400pF @ 25V | 52W | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA |
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