MOSFET, N, SMD, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:60V; On Resistance Rds(on):13.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:115W; Transistor Case Style:TO-263AB; No. of Pins:3; Operating Temperat
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 10.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs 13.5 mOhm @ 62A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 29nC @ 10V
Input Capacitance (Ciss) @ Vds 1350pF @ 25V
Power - Max 115W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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INR 1049.2
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Price : 1049.2