60V,Drain to Source Voltage (Vdss)
500 mOhm @ 660mA, 10V,Rds On (Max) @ Id, Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRFD9014PBF VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 1.1A (Ta) 500 mOhm @ 660mA, 10V 4V @ 250µA 12nC @ 10V 270pF @ 25V 1.3W Through Hole 4-DIP (0.300", 7.62mm)
IRFD9014 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 1.1A (Ta) 500 mOhm @ 660mA, 10V 4V @ 250µA 12nC @ 10V 270pF @ 25V 1.3W Through Hole 4-DIP (0.300", 7.62mm)