60V,Drain to Source Voltage (Vdss)
1.9A (Ta),Current - Continuous Drain (Id) @ 25°C
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
ZXMN6A07ZTA DIODES INC
MOSFET N-Channel, Metal Oxide 60V 1.9A (Ta) 250 mOhm @ 1.8A, 10V 3V @ 250µA 3.2nC @ 10V 166pF @ 40V 1.5W Surface Mount TO-243AA
BSP170PE6327 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 60V 1.9A (Ta) 300 mOhm @ 1.9A, 10V 4V @ 250µA 14nC @ 10V 410pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA
BSP171PE6327 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 60V 1.9A (Ta) 300 mOhm @ 1.9A, 10V 2V @ 460µA 20nC @ 10V 460pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA
BSP170PE6327T INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 60V 1.9A (Ta) 300 mOhm @ 1.9A, 10V 4V @ 250µA 14nC @ 10V 410pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA
BSP171PE6327T INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 60V 1.9A (Ta) 300 mOhm @ 1.9A, 10V 2V @ 460µA 20nC @ 10V 460pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA
BSP170P L6327 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 60V 1.9A (Ta) 300 mOhm @ 1.9A, 10V 4V @ 250µA 14nC @ 10V 410pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA
BSP171P L6327 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 60V 1.9A (Ta) 300 mOhm @ 1.9A, 10V 2V @ 460µA 20nC @ 10V 460pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA