Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 1.9A (Ta)
Rds On (Max) @ Id, Vgs 300 mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id 2V @ 460µA
Gate Charge (Qg) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) @ Vds 460pF @ 25V
Power - Max 1.8W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA