FET Type | MOSFET P-Channel, Metal Oxide |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 1.9A (Ta) |
Rds On (Max) @ Id, Vgs | 300 mOhm @ 1.9A, 10V |
Vgs(th) (Max) @ Id | 2V @ 460µA |
Gate Charge (Qg) @ Vgs | 20nC @ 10V |
Input Capacitance (Ciss) @ Vds | 460pF @ 25V |
Power - Max | 1.8W |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |