560V,Drain to Source Voltage (Vdss)
Through Hole,Mounting Type
21 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SPA08N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 7.6A (Tc) 600 mOhm @ 4.6A, 10V 3.9V @ 350µA 32nC @ 10V 750pF @ 25V 32W Through Hole TO-220-3 Full Pack
SPW21N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 21A (Tc) 190 mOhm @ 13.1A, 10V 3.9V @ 1mA 95nC @ 10V 2400pF @ 25V 208W Through Hole TO-247-3
SPW32N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 32A (Tc) 110 mOhm @ 20A, 10V 3.9V @ 1.8mA 170nC @ 10V 4200pF @ 25V 284W Through Hole TO-247-3
SPW52N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 52A (Tc) 70 mOhm @ 30A, 10V 3.9V @ 2.7mA 290nC @ 10V 6800pF @ 25V 417W Through Hole TO-247-3
SPA12N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 11.6A (Tc) 380 mOhm @ 7A, 10V 3.9V @ 500µA 49nC @ 10V 1200pF @ 25V 33W Through Hole TO-220-3 Full Pack
SPW16N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 16A (Tc) 280 mOhm @ 10A, 10V 3.9V @ 675µA 66nC @ 10V 1600pF @ 25V 160W Through Hole TO-247-3
SPA21N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 21A (Tc) 190 mOhm @ 13.1A, 10V 3.9V @ 1mA 95nC @ 10V 2400pF @ 25V 34.5W Through Hole TO-220-3 Full Pack
SPP08N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 7.6A (Tc) 600 mOhm @ 4.6A, 10V 3.9V @ 350µA 32nC @ 10V 750pF @ 25V 83W Through Hole TO-220-3
SPA16N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 16A (Tc) 280 mOhm @ 10A, 10V 3.9V @ 675µA 66nC @ 10V 1600pF @ 25V 34W Through Hole TO-220-3 Full Pack
SPP16N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 16A (Tc) 280 mOhm @ 10A, 10V 3.9V @ 675µA 66nC @ 10V 1600pF @ 25V 160W Through Hole TO-220-3