560V,Drain to Source Voltage (Vdss)
83W,Power - Max
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SPD08N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 7.6A (Tc) 600 mOhm @ 4.6A, 10V 3.9V @ 350µA 32nC @ 10V 750pF @ 25V 83W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SPP08N50C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 7.6A (Tc) 600 mOhm @ 4.6A, 10V 3.9V @ 350µA 32nC @ 10V 750pF @ 25V 83W Through Hole TO-220-3
IPW50R399CP INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 9A (Tc) 399 mOhm @ 4.9A, 10V 3.5V @ 330µA 23nC @ 10V 890pF @ 100V 83W Through Hole TO-247-3
IPP50R399CP INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 560V 9A (Tc) 399 mOhm @ 4.9A, 10V 3.5V @ 330µA 23nC @ 10V 890pF @ 100V 83W Through Hole TO-220-3