MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:560V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:83W; Transistor Case Style:TO-252; No. of Pins:3; Operating Temperature Max:1
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 560V
Current - Continuous Drain (Id) @ 25°C 7.6A (Tc)
Rds On (Max) @ Id, Vgs 600 mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 3.9V @ 350µA
Gate Charge (Qg) @ Vgs 32nC @ 10V
Input Capacitance (Ciss) @ Vds 750pF @ 25V
Power - Max 83W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63