30V,Drain to Source Voltage (Vdss)
830mW,Power - Max
19 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BSH108,215 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 1.9A (Ta) 120 mOhm @ 1A, 10V 2V @ 1mA 10nC @ 10V 190pF @ 10V 830mW Surface Mount TO-236-3, SC-59, SOT-23-3
PMV117EN,215 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 2.5A 117 mOhm @ 500mA, 10V 2V @ 1mA 4.6nC @ 10V 147pF @ 10V 830mW Surface Mount TO-236-3, SC-59, SOT-23-3
SI2304DS,215 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 1.7A (Ta) 117 mOhm @ 500mA, 10V 2V @ 1mA 4.6nC @ 10V 195pF @ 10V 830mW Surface Mount TO-236-3, SC-59, SOT-23-3
NTMS4404NR2 ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 7A (Ta) 11.5 mOhm @ 12A, 10V 3V @ 250µA 70nC @ 10V 2500pF @ 24V 830mW Surface Mount 8-SOIC (0.154", 3.90mm Width)
NTMS4706NR2 ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 6.4A (Ta) 12 mOhm @ 10.3A, 10V 2.5V @ 250µA 15nC @ 4.5V 950pF @ 24V 830mW Surface Mount 8-SOIC (0.154", 3.90mm Width)
NTMS4706NR2G ON SEMICONDUCTOR
MOSFET N-Channel, Metal Oxide 30V 6.4A (Ta) 12 mOhm @ 10.3A, 10V 2.5V @ 250µA 15nC @ 4.5V 950pF @ 24V 830mW Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI3851DV-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 1.6A (Ta) 200 mOhm @ 1.8A, 10V 1V @ 250µA 3.6nC @ 5V - 830mW Surface Mount 6-TSOP (0.065", 1.65mm Width)
SI6544BDQ-T1-GE3 VISHAY SILICONIX
N and P-Channel 30V 3.7A, 3.8A 43 mOhm @ 3.8A, 10V 3V @ 250µA 15nC @ 10V - 830mW Surface Mount 8-TSSOP (0.173", 4.40mm Width)
SI6993DQ-T1-E3 VISHAY SILICONIX
2 P-Channel (Dual) 30V 3.6A 31 mOhm @ 4.7A, 10V 3V @ 250µA 20nC @ 4.5V - 830mW Surface Mount 8-TSSOP (0.173", 4.40mm Width)
SI3590DV-T1-E3 VISHAY SILICONIX
N and P-Channel 30V 2.5A, 1.7A 77 mOhm @ 3A, 4.5V 1.5V @ 250µA 4.5nC @ 4.5V - 830mW Surface Mount 6-TSOP (0.065", 1.65mm Width)