N-Channel 30 V 117 mO 0.83 W Enhancement Mode Transistor - SOT-23-3
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta)
Rds On (Max) @ Id, Vgs 117 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) @ Vgs 4.6nC @ 10V
Input Capacitance (Ciss) @ Vds 195pF @ 10V
Power - Max 830mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3