30V,Drain to Source Voltage (Vdss)
33W,Power - Max
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PSMN020-30MLC,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 31.8A (Tmb) 18.1 mOhm @ 5A, 10V 1.95V @ 1mA 9.5nC @ 10V 430pF @ 15V 33W Surface Mount SOT1210, 8-LFPAK33 (5-Lead)
PSMN020-30MLCX NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 31.8A (Tmb) 27 mOhm @ 5A, 4.5V 1.95V @ 1mA 9.5nC @ 10V 430pF @ 15V 33W Surface Mount SOT1210, 8-LFPAK33 (5-Lead)
TK40P03M1(T6RSS-Q) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 40A (Ta) 10.8 mOhm @ 20A, 10V 2.3V @ 100µA 17.5nC @ 10V 1150pF @ 10V 33W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
TK40P03M1(T6RDS-Q) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 40A (Ta) 10.8 mOhm @ 20A, 10V 2.3V @ 100µA 17.5nC @ 10V 1150pF @ 10V 33W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63