MOSFET, N-CH, 30V, 31.8A, LFPAK33; Transistor Polarity:N Channel; Continuous Drain Current Id:31.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0205ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.62V; Power Dissipation Pd:33W; Transistor Case Style:SOT-1210; No. of Pins:5; Ope
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 31.8A (Tmb)
Rds On (Max) @ Id, Vgs 27 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1.95V @ 1mA
Gate Charge (Qg) @ Vgs 9.5nC @ 10V
Input Capacitance (Ciss) @ Vds 430pF @ 15V
Power - Max 33W
Mounting Type Surface Mount
Package / Case SOT1210, 8-LFPAK33 (5-Lead)