30V,Drain to Source Voltage (Vdss)
2.5V @ 1mA,Vgs(th) (Max) @ Id
30W,Power - Max
10 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
HAT2165H-EL-E RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 30V 55A (Ta) 3.3 mOhm @ 27.5A, 10V 2.5V @ 1mA 33nC @ 4.5V 5180pF @ 10V 30W Surface Mount SC-100, SOT-669
RJK03B7DPA-00#J5A RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 30V 30A (Ta) 7.8 mOhm @ 15A, 10V 2.5V @ 1mA 11nC @ 4.5V 1670pF @ 10V 30W Surface Mount 8-WDFN Exposed Pad
RJJ0315DPA-00#J5A RENESAS ELECTRONICS CORP
MOSFET P-Channel, Metal Oxide 30V 35A 5.9 mOhm @ 17.5A, 10V 2.5V @ 1mA 48nC @ 4.5V 4300pF @ 10V 30W Surface Mount 8-WDFN Exposed Pad
TPCC8002-H(TE12L,Q TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 22A 8.3 mOhm @ 11A, 10V 2.5V @ 1mA 27nC @ 10V 2500pF @ 10V 30W Surface Mount 8-VDFN Exposed Pad
TPCC8001-H(TE12LQM TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 22A (Ta) 8.3 mOhm @ 11A, 10V 2.5V @ 1mA 27nC @ 10V 2500pF @ 10V 30W Surface Mount 8-VDFN Exposed Pad
TPCC8002-H(TE12LQM TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 22A (Ta) 8.3 mOhm @ 11A, 10V 2.5V @ 1mA 27nC @ 10V 2500pF @ 10V 30W Surface Mount 8-VDFN Exposed Pad
TPCA8030-H(TE12LQM TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 24A (Ta) 11 mOhm @ 12A, 10V 2.5V @ 1mA 21nC @ 10V 2150pF @ 10V 30W Surface Mount 8-PowerVDFN
TPCA8031-H(TE12L,Q TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 24A (Ta) 11 mOhm @ 12A, 10V 2.5V @ 1mA 21nC @ 10V 2150pF @ 10V 30W Surface Mount 8-PowerVDFN
TPCA8023-H(TE12L,Q TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 21A (Ta) 12.9 mOhm @ 11A, 10V 2.5V @ 1mA 21nC @ 10V 2150pF @ 10V 30W Surface Mount 8-PowerVDFN
TPCA8023-H(TE12LQM TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 21A (Ta) 12.9 mOhm @ 11A, 10V 2.5V @ 1mA 21nC @ 10V 2150pF @ 10V 30W Surface Mount 8-PowerVDFN