Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 22A (Ta)
Rds On (Max) @ Id, Vgs 8.3 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) @ Vgs 27nC @ 10V
Input Capacitance (Ciss) @ Vds 2500pF @ 10V
Power - Max 30W
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad