30V,Drain to Source Voltage (Vdss)
270W,Power - Max
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRLBA3803P INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 30V 179A (Tc) 5 mOhm @ 71A, 10V 1V @ 250µA 140nC @ 4.5V 5000pF @ 25V 270W Through Hole -
PSMN1R8-30PL,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A 1.8 mOhm @ 25A, 10V 2.15V @ 1mA 170nC @ 10V 10180pF @ 12V 270W Through Hole TO-220-3
PSMN1R8-30BL,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A (Tmb) 1.8 mOhm @ 25A, 10V 2.15V @ 1mA 170nC @ 10V 10180pF @ 15V 270W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRLBA3803 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 179A (Tc) 5 mOhm @ 71A, 10V 1V @ 250µA 140nC @ 4.5V 5000pF @ 25V 270W Through Hole -