Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 179A (Tc)
Rds On (Max) @ Id, Vgs 5 mOhm @ 71A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 140nC @ 4.5V
Input Capacitance (Ciss) @ Vds 5000pF @ 25V
Power - Max 270W
Mounting Type Through Hole
Package / Case -