| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF9310PBF | INTERNATIONAL RECTIFIER CORP | MOSFET P-Channel, Metal Oxide | 30V | 20A (Tc) | 4.6 mOhm @ 20A, 10V | 2.4V @ 100µA | 165nC @ 10V | 5250pF @ 15V | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| IRFH9310TRPBF | INTERNATIONAL RECTIFIER CORP | MOSFET P-Channel, Metal Oxide | 30V | 21A (Ta), 40A (Tc) | 4.6 mOhm @ 21A, 10V | 2.4V @ 100µA | 58nC @ 4.5V | 5250pF @ 15V | 3.1W | Surface Mount | 8-VDFN | |
| IRF9310TRPBF | INTERNATIONAL RECTIFIER CORP | MOSFET P-Channel, Metal Oxide | 30V | 20A (Tc) | 4.6 mOhm @ 20A, 10V | 2.4V @ 100µA | 165nC @ 10V | 5250pF @ 15V | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SISS27DN-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 23A (Ta), 50A (Tc) | 5.6 mOhm @ 15A, 10V | 2.2V @ 250µA | 140nC @ 10V | 5250pF @ 15V | 4.8W | Surface Mount | 8-PowerVDFN |
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