Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W;
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Rds On (Max) @ Id, Vgs 4.6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.4V @ 100µA
Gate Charge (Qg) @ Vgs 165nC @ 10V
Input Capacitance (Ciss) @ Vds 5250pF @ 15V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)