| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BSC080N03LS G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 30V | 14A (Ta), 53A (Tc) | 8 mOhm @ 30A, 10V | 2.2V @ 250µA | 21nC @ 10V | 1700pF @ 15V | 35W | Surface Mount | 8-PowerTDFN | |
| BSC0902NS | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 30V | 24A (Ta), 100A (Tc) | 2.6 mOhm @ 30A, 10V | 2.2V @ 250µA | 26nC @ 10V | 1700pF @ 15V | 48W | Surface Mount | 8-PowerTDFN | |
| BSZ088N03LS G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 30V | 12A (Ta), 40A (Tc) | 8.8 mOhm @ 20A, 10V | 2.2V @ 250µA | 21nC @ 10V | 1700pF @ 15V | 35W | Surface Mount | 8-PowerTDFN | |
| SIS402DN-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 35A (Tc) | 6 mOhm @ 19A, 10V | 2.2V @ 250µA | 42nC @ 10V | 1700pF @ 15V | 5.2W | Surface Mount | PowerPAK® 1212-8 | |
| SIR402DP-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 35A (Tc) | 6 mOhm @ 20A, 10V | 2.2V @ 250µA | 42nC @ 10V | 1700pF @ 15V | 36W | Surface Mount | PowerPAK® SO-8 | |
| SI4156DY-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 24A (Tc) | 6 mOhm @ 15.7A, 10V | 2.2V @ 250µA | 42nC @ 10V | 1700pF @ 15V | 6W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
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