| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NTHS5402T1 | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 30V | 4.9A (Ta) | 35 mOhm @ 4.9A, 10V | 1V @ 250µA | 20nC @ 10V | - | 1.3W | Surface Mount | 8-SMD, Flat Lead | |
| EMH2411R-TL-H | ON SEMICONDUCTOR | 2 N-Channel (Dual) Common Drain | 30V | 5A | 36.5 mOhm @ 2.5A, 4.5V | - | 5.9nC @ 4.5V | - | 1.3W | Surface Mount | 8-SMD, Flat Lead | |
| SI4800BDY-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 6.5A (Ta) | 18.5 mOhm @ 9A, 10V | 1.8V @ 250µA | 13nC @ 5V | - | 1.3W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI5435BDC-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 4.3A (Ta) | 45 mOhm @ 4.3A, 10V | 3V @ 250µA | 24nC @ 10V | - | 1.3W | Surface Mount | 8-SMD, Flat Lead | |
| SI5402BDC-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 4.9A (Ta) | 35 mOhm @ 4.9A, 10V | 3V @ 250µA | 20nC @ 10V | - | 1.3W | Surface Mount | 8-SMD, Flat Lead | |
| SI5402BDC-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 4.9A (Ta) | 35 mOhm @ 4.9A, 10V | 3V @ 250µA | 20nC @ 10V | - | 1.3W | Surface Mount | 8-SMD, Flat Lead | |
| SI4412ADY-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 5.8A (Ta) | 24 mOhm @ 8A, 10V | 1V @ 250µA | 20nC @ 10V | - | 1.3W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI4800BDY-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 6.5A (Ta) | 18.5 mOhm @ 9A, 10V | 1.8V @ 250µA | 13nC @ 5V | - | 1.3W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI9435BDY-T1-E3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 4.1A (Ta) | 42 mOhm @ 5.7A, 10V | 3V @ 250µA | 24nC @ 10V | - | 1.3W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI9435BDY-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 4.1A (Ta) | 42 mOhm @ 5.7A, 10V | 3V @ 250µA | 24nC @ 10V | - | 1.3W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
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