MOSFET, N CH, 30V, 4.9A, CHIPFET; Transistor Polarity:N Channel; Continuous Drain Current Id:4.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.029ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:20V; Power Dissipation Pd:2.5W; Transistor Case Style:ChipFET; No. of Pins:8; Operating
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4.9A (Ta)
Rds On (Max) @ Id, Vgs 35 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) @ Vds -
Power - Max 1.3W
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead