30V,Drain to Source Voltage (Vdss)
35nC @ 10V,Gate Charge (Qg) @ Vgs
-,Input Capacitance (Ciss) @ Vds
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI9936DY,518 NXP SEMICONDUCTORS
2 N-Channel (Dual) 30V 5A 50 mOhm @ 5A, 10V 1V @ 250µA 35nC @ 10V - 2W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI3483DV-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 4.7A (Ta) 35 mOhm @ 6.2A, 10V 3V @ 250µA 35nC @ 10V - 1.14W Surface Mount 6-TSOP (0.065", 1.65mm Width)
SI2371EDS-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 3.7A (Ta), 4.8A (Tc) 45 mOhm @ 3.7A, 10V 1.5V @ 250µA 35nC @ 10V - 1W Surface Mount TO-236-3, SC-59, SOT-23-3
SI3483DV-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 4.7A (Ta) 35 mOhm @ 6.2A, 10V 3V @ 250µA 35nC @ 10V - 1.14W Surface Mount 6-TSOP (0.065", 1.65mm Width)
SI4544DY-T1-E3 VISHAY SILICONIX
N and P-Channel 30V - 35 mOhm @ 6.5A, 10V 1V @ 250µA 35nC @ 10V - - Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4544DY-T1-GE3 VISHAY SILICONIX
N and P-Channel 30V - 35 mOhm @ 6.5A, 10V 1V @ 250µA 35nC @ 10V - - Surface Mount 8-SOIC (0.154", 3.90mm Width)