Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4.7A (Ta)
Rds On (Max) @ Id, Vgs 35 mOhm @ 6.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 35nC @ 10V
Input Capacitance (Ciss) @ Vds -
Power - Max 1.14W
Mounting Type Surface Mount
Package / Case 6-TSOP (0.065", 1.65mm Width)