30V,Drain to Source Voltage (Vdss)
37nC @ 10V,Gate Charge (Qg) @ Vgs
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMN3010LFG-7 DIODES INC
MOSFET N-Channel, Metal Oxide 30V 11A (Ta), 30A (Tc) 8.5 mOhm @ 18A, 10V 2.5V @ 250µA 37nC @ 10V 2075pF @ 15V 900mW Surface Mount 8-PowerVDFN
FDMS8026S FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 30V 19A (Ta), 22A (Tc) 4.3 mOhm @ 19A, 10V 3V @ 1mA 37nC @ 10V 2280pF @ 15V 2.5W Surface Mount 8-PQFN, Power56
DMN3010LFG-13 DIODES INC
MOSFET N-Channel, Metal Oxide 30V 11A (Ta), 30A (Tc) 8.5 mOhm @ 18A, 10V 2.5V @ 250µA 37nC @ 10V 2075pF @ 15V 900mW - -
FDMS8674 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 30V 17A (Ta), 21A (Tc) 5 mOhm @ 17A, 10V 3V @ 250µA 37nC @ 10V 2320pF @ 15V 2.5W Surface Mount 8-PQFN, Power56
PSMN3R5-30LL,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 40A (Tc) 3.6 mOhm @ 10A, 10V 2.15V @ 1mA 37nC @ 10V 2061pF @ 15V 71W Surface Mount 8-VDFN Exposed Pad
UPA2738GR-E1-AT RENESAS ELECTRONICS CORP
MOSFET P-Channel, Metal Oxide 30V 10A 15 mOhm @ 10A, 10V - 37nC @ 10V 1450pF @ 10V 1.1W Surface Mount 8-PowerSOIC (0.173", 4.40mm)
TPCC8073,LQ(O TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 30V 27A (Ta) 4.5 mOhm @ 13.5A, 10V 2.3V @ 300µA 37nC @ 10V 2600pF @ 10V 39W Surface Mount 8-PowerVDFN