Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Rds On (Max) @ Id, Vgs 3.6 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Gate Charge (Qg) @ Vgs 37nC @ 10V
Input Capacitance (Ciss) @ Vds 2061pF @ 15V
Power - Max 71W
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad