30V,Drain to Source Voltage (Vdss)
600mV @ 250µA,Vgs(th) (Max) @ Id
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
STC6NF30V STMICROELECTRONICS
2 N-Channel (Dual) 30V 6A 25 mOhm @ 3A, 4.5V 600mV @ 250µA 9nC @ 2.5V 800pF @ 25V 1.5W Surface Mount 8-TSSOP (0.173", 4.40mm Width)
STC5NF30V STMICROELECTRONICS
2 N-Channel (Dual) 30V 5A 31 mOhm @ 2.5A, 4.5V 600mV @ 250µA 11.5nC @ 4.5V 460pF @ 15V 1.5W Surface Mount 8-TSSOP (0.173", 4.40mm Width)
STC5DNF30V STMICROELECTRONICS
2 N-Channel (Dual) 30V 4.5A 35 mOhm @ 2.3A, 4.5V 600mV @ 250µA 11.5nC @ 4.5V 460pF @ 25V 1.3W Surface Mount 8-TSSOP (0.173", 4.40mm Width)
SI5449DC-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 3.1A (Ta) 85 mOhm @ 3.1A, 4.5V 600mV @ 250µA 11nC @ 4.5V - 1.3W Surface Mount 8-SMD, Flat Lead
SI5449DC-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 30V 3.1A (Ta) 85 mOhm @ 3.1A, 4.5V 600mV @ 250µA 11nC @ 4.5V - 1.3W Surface Mount 8-SMD, Flat Lead
SI6404DQ-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 8.6A (Ta) 9 mOhm @ 11A, 10V 600mV @ 250µA 48nC @ 4.5V - 1.08W Surface Mount 8-TSSOP (0.173", 4.40mm Width)
SI6404DQ-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 8.6A (Ta) 9 mOhm @ 11A, 10V 600mV @ 250µA 48nC @ 4.5V - 1.08W Surface Mount 8-TSSOP (0.173", 4.40mm Width)