30V,Drain to Source Voltage (Vdss)
600mV @ 250µA,Vgs(th) (Max) @ Id
48nC @ 4.5V,Gate Charge (Qg) @ Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI6404DQ-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 8.6A (Ta) 9 mOhm @ 11A, 10V 600mV @ 250µA 48nC @ 4.5V - 1.08W Surface Mount 8-TSSOP (0.173", 4.40mm Width)
SI6404DQ-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 8.6A (Ta) 9 mOhm @ 11A, 10V 600mV @ 250µA 48nC @ 4.5V - 1.08W Surface Mount 8-TSSOP (0.173", 4.40mm Width)