| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TPH11003NL,LQ | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 30V | 32A (Ta) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 1.6W | Surface Mount | 8-PowerVDFN | |
| PSMN013-30YLC,115 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 32A (Ta) | 13.6 mOhm @ 10A, 10V | 1.95V @ 1mA | 8.3nC @ 10V | 521pF @ 15V | 26W | Surface Mount | SC-100, SOT-669, 4-LFPAK | |
| PSMN017-30PL,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 32A (Ta) | 17 mOhm @ 10A, 10V | 2.15V @ 1mA | 10.7nC @ 10V | 552pF @ 15V | 45W | Through Hole | TO-220-3 | |
| PSMN017-30EL,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 32A (Ta) | 17 mOhm @ 10A, 10V | 2.15V @ 1mA | 10.7nC @ 10V | 552pF @ 15V | 47W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| PSMN017-30BL,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 32A (Ta) | 17 mOhm @ 10A, 10V | 2.15V @ 1mA | 10.7nC @ 10V | 552pF @ 15V | 47W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| SIR818DP-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 32A (Ta) | 2.8 mOhm @ 20A, 10V | 2.4V @ 250µA | 960nC @ 10V | 3660pF @ 15V | 5.2W | Surface Mount | PowerPAK® SO-8 |
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