Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 32A (Ta)
Rds On (Max) @ Id, Vgs 17 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Gate Charge (Qg) @ Vgs 10.7nC @ 10V
Input Capacitance (Ciss) @ Vds 552pF @ 15V
Power - Max 47W
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA