30V,Drain to Source Voltage (Vdss)
1.1A (Ta),Current - Continuous Drain (Id) @ 25°C
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
ZXM61P03FTA DIODES INC
MOSFET P-Channel, Metal Oxide 30V 1.1A (Ta) 350 mOhm @ 600mA, 10V 1V @ 250µA 4.8nC @ 10V 140pF @ 25V 625mW Surface Mount TO-236-3, SC-59, SOT-23-3
DMN100-7-F DIODES INC
MOSFET N-Channel, Metal Oxide 30V 1.1A (Ta) 240 mOhm @ 1A, 10V 3V @ 1mA 5.5nC @ 10V 150pF @ 10V 500mW Surface Mount TO-236-3, SC-59, SOT-23-3
FDZ3N513ZT FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Schottky, Metal Oxide 30V 1.1A (Ta) 462 mOhm @ 300mA, 4.5V 1.5V @ 250µA 1nC @ 4.5V 85pF @ 15V 1W Surface Mount 4-UFBGA, WLCSP
NDS351N FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 30V 1.1A (Ta) 160 mOhm @ 1.4A, 10V 2V @ 250µA 3.5nC @ 5V 140pF @ 10V 460mW Surface Mount TO-236-3, SC-59, SOT-23-3
NDS356AP FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 30V 1.1A (Ta) 200 mOhm @ 1.3A, 10V 2.5V @ 250µA 4.4nC @ 5V 280pF @ 10V 460mW Surface Mount TO-236-3, SC-59, SOT-23-3
SSM3J112TU(TE85L) TOSHIBA CORP
MOSFET P-Channel, Metal Oxide 30V 1.1A (Ta) 390 mOhm @ 500mA, 10V 1.8V @ 100µA - 86pF @ 15V 500mW Surface Mount 3-SMD, Flat Leads
DMN100-7 DIODES INC
MOSFET N-Channel, Metal Oxide 30V 1.1A (Ta) 240 mOhm @ 1A, 10V 3V @ 1mA 5.5nC @ 10V 150pF @ 10V 500mW Surface Mount TO-236-3, SC-59, SOT-23-3
ZXM61P03FTC DIODES INC
MOSFET P-Channel, Metal Oxide 30V 1.1A (Ta) 350 mOhm @ 600mA, 10V 1V @ 250µA 4.8nC @ 10V 140pF @ 25V 625mW Surface Mount TO-236-3, SC-59, SOT-23-3
PMV185XN,215 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 1.1A (Ta) 250 mOhm @ 1.1A, 4.5V 1.5V @ 250µA 1.3nC @ 4.5V 76pF @ 15V 325mW Surface Mount TO-236-3, SC-59, SOT-23-3