MOSFET, N CH, 30V, 1.1A, WL-CSP 1X1; Transistor Polarity:N Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.384ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power Dissipation Pd:1W; Transistor Case Style:WL-CSP; No. of Pins:4; Operat
Specification
FET Type MOSFET N-Channel, Schottky, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 1.1A (Ta)
Rds On (Max) @ Id, Vgs 462 mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 1nC @ 4.5V
Input Capacitance (Ciss) @ Vds 85pF @ 15V
Power - Max 1W
Mounting Type Surface Mount
Package / Case 4-UFBGA, WLCSP
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INR 756.4
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Order Multiple:1
Price : 756.4