| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NTHS5402T1 | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 30V | 4.9A (Ta) | 35 mOhm @ 4.9A, 10V | 1V @ 250µA | 20nC @ 10V | - | 1.3W | Surface Mount | 8-SMD, Flat Lead | |
| SI5402BDC-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 4.9A (Ta) | 35 mOhm @ 4.9A, 10V | 3V @ 250µA | 20nC @ 10V | - | 1.3W | Surface Mount | 8-SMD, Flat Lead | |
| SI5402BDC-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 4.9A (Ta) | 35 mOhm @ 4.9A, 10V | 3V @ 250µA | 20nC @ 10V | - | 1.3W | Surface Mount | 8-SMD, Flat Lead | |
| SI5402DC-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 4.9A (Ta) | 35 mOhm @ 4.9A, 10V | 1V @ 250µA | 20nC @ 10V | - | 1.3W | Surface Mount | 8-SMD, Flat Lead | |
| SI5402DC-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 30V | 4.9A (Ta) | 35 mOhm @ 4.9A, 10V | 1V @ 250µA | 20nC @ 10V | - | 1.3W | Surface Mount | 8-SMD, Flat Lead |
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