SiCFET N-Channel, Silicon Carbide,FET Type
108W,Power - Max
1 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SCT2280KEC ROHM CO LTD
SiCFET N-Channel, Silicon Carbide 1200V (1.2kV) 14A (Tc) 364 mOhm @ 4A, 18V 4V @ 1.4mA 36nC @ 18V 667pF @ 800V 108W Through Hole TO-247-3