| FET Type | SiCFET N-Channel, Silicon Carbide |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 364 mOhm @ 4A, 18V |
| Vgs(th) (Max) @ Id | 4V @ 1.4mA |
| Gate Charge (Qg) @ Vgs | 36nC @ 18V |
| Input Capacitance (Ciss) @ Vds | 667pF @ 800V |
| Power - Max | 108W |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
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