SiCFET N-Channel, Silicon Carbide,FET Type
106nC @ 18V,Gate Charge (Qg) @ Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SCT2080KEC ROHM CO LTD
SiCFET N-Channel, Silicon Carbide 1200V (1.2kV) 40A (Tc) 117 mOhm @ 10A, 18V 4V @ 4.4mA 106nC @ 18V 2080pF @ 800V 179W Through Hole TO-247-3
SCH2080KEC ROHM CO LTD
SiCFET N-Channel, Silicon Carbide 1200V (1.2kV) 40A (Tc) 117 mOhm @ 10A, 18V 4V @ 4.4mA 106nC @ 18V 1850pF @ 800V 179W Through Hole TO-247-3