| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NTHD4508NT1G | ON SEMICONDUCTOR | 2 N-Channel (Dual) | 20V | 3A | 75 mOhm @ 3.1A, 4.5V | 1.2V @ 250µA | 4nC @ 4.5V | 180pF @ 10V | 1.13W | Surface Mount | 8-SMD, Flat Lead | |
| SSM6N57NU,LF | TOSHIBA CORP | 2 N-Channel (Dual) | 30V | 4A | 46 mOhm @ 2A, 4.5V | 1V @ 1mA | 4nC @ 4.5V | 310pF @ 10V | 1W | Surface Mount | 6-WDFN Exposed Pad | |
| NTLGD3502NT2G | ON SEMICONDUCTOR | 2 N-Channel (Dual) | 20V | 4.3A, 3.6A | 60 mOhm @ 4.3A, 4.5V | 2V @ 250µA | 4nC @ 4.5V | 480pF @ 10V | 1.74W | Surface Mount | 6-VDFN Exposed Pad | |
| NTLGD3502NT1G | ON SEMICONDUCTOR | 2 N-Channel (Dual) | 20V | 4.3A, 3.6A | 60 mOhm @ 4.3A, 4.5V | 2V @ 250µA | 4nC @ 4.5V | 480pF @ 10V | 1.74W | Surface Mount | 6-VDFN Exposed Pad | |
| CSD86311W1723 | TEXAS INSTRUMENTS INC | 2 N-Channel (Dual) | 25V | 4.5A | 39 mOhm @ 2A, 8V | 1.4V @ 250µA | 4nC @ 4.5V | 585pF @ 12.5V | 1.5W | Surface Mount | 12-UFBGA, DSBGA | |
| SI3900DV-T1-E3 | VISHAY SILICONIX | 2 N-Channel (Dual) | 20V | 2A | 125 mOhm @ 2.4A, 4.5V | 1.5V @ 250µA | 4nC @ 4.5V | - | 830mW | Surface Mount | 6-TSOP (0.065", 1.65mm Width) | |
| SI3900DV-T1-GE3 | VISHAY SILICONIX | 2 N-Channel (Dual) | 20V | 2A | 125 mOhm @ 2.4A, 4.5V | 1.5V @ 250µA | 4nC @ 4.5V | - | 830mW | Surface Mount | 6-TSOP (0.065", 1.65mm Width) |
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