MOSFET, NN CH, 25V, 4.5A, 12DSBGA; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.031ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:1.5W; Transistor Case Style:DSBGA; No. of Pins:12; Operating
Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 4.5A
Rds On (Max) @ Id, Vgs 39 mOhm @ 2A, 8V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) @ Vgs 4nC @ 4.5V
Input Capacitance (Ciss) @ Vds 585pF @ 12.5V
Power - Max 1.5W
Mounting Type Surface Mount
Package / Case 12-UFBGA, DSBGA