2 N-Channel (Dual),FET Type
186nC @ 10V,Gate Charge (Qg) @ Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
APTM100DDA35T3G MICROSEMI POWER PRODUCTS GROUP
2 N-Channel (Dual) 1000V (1kV) 22A 420 mOhm @ 11A, 10V 5V @ 2.5mA 186nC @ 10V 5200pF @ 25V 390W Chassis Mount SP3
APTM100DSK35T3G MICROSEMI POWER PRODUCTS GROUP
2 N-Channel (Dual) 1000V (1kV) 22A 420 mOhm @ 11A, 10V 5V @ 2.5mA 186nC @ 10V 5200pF @ 25V 390W Chassis Mount SP3